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RM2B

EIC discrete Semiconductors

SILICON RECTIFIER DIODES

RM2 - RM2Z PRV : 200 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capab...


EIC discrete Semiconductors

RM2B

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RM2 - RM2Z PRV : 200 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM2Z 200 140 200 RM2 400 280 400 RM2A 600 420 600 1.2 RM2B 800 560 800 RM2C 1000 700 1000 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) CJ R θJA TJ TSTG 100 0.91 10 50 30 50 - 65 to + 175 - 65 to + 175 Amps. Volts µA µA pF °C/W °C °C Typica...




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