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RM35HG-34S

Mitsubishi Electric Semiconductor

Super Fast Recovery Diodes

RM35HG-34S B F D G - DIA. K A L J 1 2 3 C H Description: Mitsubishi Super Fast Recovery Diodes are designed for u...


Mitsubishi Electric Semiconductor

RM35HG-34S

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Description
RM35HG-34S B F D G - DIA. K A L J 1 2 3 C H Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: ٗ Non-Isolated Package M E E N ٗ Planar Chips ٗ trr = 300ns Max. Applications: ٗ Snubber Circuits 1 3 2 4 Ordering Information: Example: Select the complete part number from the table below -i.e. RM35HG-34S is a 1700V, 35 Ampere Super Fast Recovery Single Diode Module. Current Rating Amperes 35 Voltage Volts (x 50) 34 Outline Drawing and Circuit Diagram Type RM Dimension A B C D E F G Inches 1.102±0.02 0.81 Max. 0.79 Min. 0.24±0.008 0.214±0.012 0.20±0.012 Millimeters 26.0±0.5 20.5 Max. 20.0 Min. 6.0±0.2 5.45±0.3 5.0±0.3 Dimension H J K L M N Inches 0.12±0.012 0.10±0.012 0.10 0.08±0.012 0.04±0.008 0.02±0.008 Millimeters 3.0±0.3 2.5±0.3 2.5 2.0±0.3 1.0±0.2 0.6±0.2 0.214±0.012 Dia. Dia. 3.2±0.2 Sep.1998 RM35HG-34S Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Peak Reverse Blocking Voltage (Non-Repetitive) DC Reverse Blocking Voltage DC Current, TC = 80°C (Resistive Load) Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) I2t for Fusing, (8.3 milliseconds) Storage Temperature Operating Temperature Maximum Mounting Torque M3 Mounting Screw Module Weight (Typical) Symbol VRRM VR(DC) IF(DC) IFSM I2t Tstg Tj — — RM35HG-34S 1700 1360 35 400 — -40 to +125 -40 to +150 0.59 ~ 0.98 10 Units Volts Volts Amperes Amperes A2sec °C °C N·m Grams Electrical and Thermal ...




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