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RM50HG-12S Dataheets PDF



Part Number RM50HG-12S
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH SPEED SWITCHING USE NON-INSULATED TYPE
Datasheet RM50HG-12S DatasheetRM50HG-12S Datasheet (PDF)

MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D G - DIA. K A L J 1 2 3 M E E N C H Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: ٗ Non-Isolated Package ٗ Planar Chips ٗ trr = 200ns Max. Applications: ٗ Snubber Circuits 1 3 2 4 Ordering Information: Example: Select the complete part number from the table below -i.e. RM50HG-12S is a 600V, 50 Ampere Super Fast.

  RM50HG-12S   RM50HG-12S


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MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D G - DIA. K A L J 1 2 3 M E E N C H Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: ٗ Non-Isolated Package ٗ Planar Chips ٗ trr = 200ns Max. Applications: ٗ Snubber Circuits 1 3 2 4 Ordering Information: Example: Select the complete part number from the table below -i.e. RM50HG-12S is a 600V, 50 Ampere Super Fast Recovery Single Diode Module. Current Rating Amperes 50 Voltage Volts (x 50) 12 Outline Drawing and Circuit Diagram Type RM Dimension A B C D E F G Inches 1.102±0.02 0.81 Max. 0.79 Min. 0.24±0.008 0.214±0.012 0.20±0.012 Millimeters 26.0±0.5 20.5 Max. 20.0 Min. 6.0±0.2 5.45±0.3 5.0±0.3 Dimension H J K L M N Inches 0.12±0.012 0.10±0.012 0.10 0.08±0.012 0.04±0.008 0.02±0.008 Millimeters 3.0±0.3 2.5±0.3 2.5 2.0±0.3 1.0±0.2 0.6±0.2 0.214±0.012 Dia. Dia. 3.2±0.2 Sep.1998 MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Peak Reverse Blocking Voltage (Repetitive) Peak Reverse Blocking Voltage (Non-Repetitive) DC Reverse Blocking Voltage DC Current, TC = 80°C (Resistive Load) Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) Storage Temperature Operating Temperature Maximum Mounting Torque M3 Mounting Screw Module Weight (Typical) Symbol VRRM VRSM VR(DC) IF(DC) IFSM Tstg Tj — — RM50HG-12S 600 720 480 50 1000 -40 to +125 -40 to +150 0.59 ~ 0.98 10 Units Volts Volts Volts Amperes Amperes °C °C N·m Grams Electrical and Thermal Characteristics, T j = 25°C unless otherwise specified Characteristics Blocking State Maximums Reverse Leakage Current, Peak IRRM VRRM applied, Tj = 25°C VRRM applied, Tj = 125°C Conducting State Maximums Forward Voltage Drop Switching Minimums Reverse Recovery Time trr IFM = 200A, Tj = 150°C di/dt = -1000A/µs, VR = 300V Lead Integrity — — Thermal Maximums Junction to Case Thermal Resistance Contact Thermal Resistance *Maximum ratings unless otherwise specified Symbol Test Conditions Max. Units 0.1 1.0 mA mA VFM Tj = 25°C, IFM = 200A 4.0 Volts µs 0.2 Tension Load: 2.5 kg Bending Load: 1 kg bent to 90° Junction to case Case to Fin, Thermal Grease Applied 30.0 2.0 s times °C/Watt °C/Watt Rth(j-c) Rth(c-f) 0.5 0.5 MAXIMUM FORWARD CHARACTERISTIC MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO CASE) RATED SURGE (NON-REPETITIVE) FORWARD CURRENT 100 Tj = 25 C FORWARD CURRENT, IF, (AMPERES) o 101 1000 TRANSIENT THERMAL IMPEDANCE, Zth (j-c), (°C/W) 103 0.5 SURGE FORWARD CURRENT (A) 0.4 800 0.3 600 102 0.2 400 0.1 200 101 1.0 2.0 3.0 4.0 5.0 6.0 FORWARD VOLTAGE DROP, VF, (VOLTS) 0 10-3 10-2 TIME (S) 10-1 100 0 100 101 CYCLES (60Hz) 102 Sep.1998 .


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