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RM600DY-66S

Powerex Power Semiconductors

HIGH POWER/ HIGH SPEED SWITCHING USE INSULATED TYPE

PRE . ation nge. pecific to cha final s subject a t o is n limits are is h e: T tric Notice parame Som ARY LIMIN MITS...


Powerex Power Semiconductors

RM600DY-66S

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PRE . ation nge. pecific to cha final s subject a t o is n limits are is h e: T tric Notice parame Som ARY LIMIN MITSUBISHI FAST RECOVERY DIODE MODULE RM600DY-66S HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module RM600DY-66S q IDC ............................................................... 600A q VRRM .................................................... 3300V q Insulated type q 2-element in a pack APPLICATION 3-level inverters, 3-level converters, DC choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57 ± 0.25 57 ± 0.25 4-M8 NUTS (E) A1 K1 (C) 20 (E) A2 124 ± 0.25 140 K2 (C) K1 C K2 C A1 E A2 E C E G 6-φ7 MOUNTING HOLES 40 CIRCUIT DIAGRAM 61.5 18 15 38 5 LABEL 30 Aug.1998 PRE . ation nge. pecific to cha final s subject a t o n are is s it is m e: Th tric li Notice parame Som ARY LIMIN MITSUBISHI FAST RECOVERY DIODE MODULE RM600DY-66S HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) Symbol VRRM VDRM VR(DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 66 3300 3300 2200 Unit V V V Symbol IDC IFMS I 2t Tj Tstg Viso — — Parameter DC current Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolation Voltage Mounting torque Weight Conditions TC =25°C 1 cycle of half wave 60Hz, peak value, Tj = 25°C star...




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