RN1001~RN1006
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003 RN1004,RN1005,RN1006
Swi...
RN1001~RN1006
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003 RN1004,RN1005,RN1006
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2001~RN2006 Unit: mm
Equivalent Circuit and Bias Resister Values
Type No. RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1001~1006 RN1001~1006 RN1001~1004 RN1005, 1006 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 100 400 150 −55~150
JEDEC EIAJ TOSHIBA Weight: 0.21g
Unit V V V mA mW °C °C
TO-92 SC-43 2-5F1B
1
2001-06-07
RN1001~RN1006
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN1004 RN1005 RN1006 Input voltage (OFF) Transition frequency Collector Output capacitance RN1001~1004 RN1005, 1006 RN1001~1006 RN1001~1006 RN1001 RN1002 Input resistor RN1003 RN1004 RN1005 RN1006 RN1001~1004 Resistor ratio RN1005 RN1006 R1/R2 ― R1 ― VI...