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RN1206

Toshiba Semiconductor

Silicon NPN Transistor

RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Swi...


Toshiba Semiconductor

RN1206

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Description
RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2201~2206 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1201~1206 RN1201~1206 RN1201~1204 RN1205, 1206 Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 10 5 100 300 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Unit V V V mA mW °C °C 1 2001-06-07 RN1201~RN1206 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 RN1206 Input voltage (OFF) Translation frequency Collector output capacitance RN1201~1204 RN1205~1206 RN1201~1206 RN1201~1206 RN1201 RN1202 Input Resistor RN1203 RN1204 RN1205 RN1206 RN1201~1205 Resistor Ratio RN1205 RN1206 R1/R2 R1 VI (OFF) fT Cob V...




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