RN1210,RN1211
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, In...
RN1210,RN1211
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2210, RN2211 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 300 150 −55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.13g
― ― 2-4E1A
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN1210 RN1211 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = −10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ
1
2001-06-07
RN1210,RN1211
2
2001-06-07
RN1210,RN1211
3
2001-06-07
RN1210,RN1211
RESTRICTIONS ON PRODUCT USE
000707EAA
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