RN1211

RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2210, RN2211 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 300 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN1210 RN1211 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = −10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ 1 2001-06-07 RN1210,RN1211 2 2001-06-07 RN1210,RN1211 3 2001-06-07 RN1210,RN1211 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor d...