RN1241

RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma) l Low on resistance : RON = 1Ω (typ.) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit: mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 20 25 300 300 150 −55~150 Unit V V V mA mW °C °C 1 2001-06-07 RN1241~RN1244 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance RN1241 Input resistor RN1242 RN1243 RN1244 R1 Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit ― ― ― ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 6V, IC = 4mA VCB = 10V, IE = 0, f = 1MHz Min ― ― 200 ― ― ― 3.9 7 Typ. ― ― ― ― 30 4.8 5.6 10 22 2.2 Max 0.1 0.1 1200 0.1 ― ― 7.3 13 28.6 2.86 kΩ Unit µA µA ― V MHz pF ― 15.4 1.54 Note: hEE Classification A: 200~700 B: 350~1200 2 2001-06-07 R...