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RN1409

Toshiba Semiconductor

Silicon NPN Transistor

RN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN1409 Switching, Invert...


Toshiba Semiconductor

RN1409

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Description
RN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN1409 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2407~RN2409 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1407 RN1408 RN1409 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1407~RN1409 RN1407~RN1409 RN1407 Emitter-base voltage RN1408 RN1409 Collector current Collector power dissipation Junction temperature Storage temperature range RN1407~RN1409 RN1407~RN1409 RN1407~RN1409 RN1407~RN1409 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 200 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.012g TO-236MOD SC-59 2-3F1A Unit V V V mA mW °C °C 1 2001-06-07 RN1407,RN1408,RN1409 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1407~1409 RN1407 Emitter cut-off current RN1408 RN1409 RN1407 DC current gain RN1408 RN1409 Collector-emitter saturation voltage RN1407~1409 RN1407 Input voltage (ON) RN1408 RN1409 RN1407 Input voltage (OFF) RN1408 RN1409 Transition frequency Collector Output capacitance RN1407~1409 RN1407~1409 RN1407 Input resistor RN1408 RN1409 RN1407 Resistor ratio RN1408 RN1409 R1/R2 ― ― R1 ― ― fT Cob ― ― VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VI (OFF) ―...




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