RN1421~RN1427
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1...
RN1421~RN1427
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l High current type (IC (max) = 800mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN2401~RN2406 Unit: mm
Equivalent Circuit and Bias Resister Values
Type No. RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10
JEDEC JEITA TOSHIBA
― SC-59 2-3F1A
Weight: 0.012 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN1421~1427 RN1421~1424 Emitter-base voltage RN1425, 1426 RN1427 Collector current Collector power dissipation Junction temperature Storage temperature range RN1421~1427 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 10 5 6 800 200 150 −55~150 mA mW °C °C V Unit V V
1
2002-02-08
RN1421~RN1427
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current RN1421~1427 RN1421 RN1422 RN1423 Emitter cut-off current RN1424 RN1425 RN1426 RN1427 RN1421 RN1422 RN1423 DC current gain RN1424 RN1425 RN1426 RN1427 Collector-emitter saturation voltage RN1421~1427 RN1421 RN1422 RN1423 Input voltage (ON) RN1424 RN1425 RN1426 RN1427 RN1421~1424 Input voltage (OFF) RN1425, 1426 RN1427 Transition frequency Collector Output capacitance RN1421~1427 RN1421~1...