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RN1503

Toshiba Semiconductor

Silicon NPN Transistor

RN1501~RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Uni...


Toshiba Semiconductor

RN1503

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Description
RN1501~RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2501~RN2506 Equivalent Circuit and Bias Resister Values Type No. RN1501 RN1502 RN1503 RN1504 RN1505 RN1506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 6.8mg ― ― 2-3L1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1501~1506 RN1501~1506 RN1501~1504 RN1505, 1506 Symbol VCBO VCEO VEBO IC PC * Tj Tstg Rating 50 50 10 5 100 300 150 −55~150 Unit V V V mA mW °C °C * Total rating 1 2001-06-07 RN1501~RN1506 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN1501~1506 RN1501 RN1502 Emitter cut-off current RN1503 RN1504 RN1505 RN1506 RN1501 RN1502 DC current gain RN1503 RN1504 RN1505 RN1506 Collector-emitter saturation voltage RN1501~1506 RN1501 RN1502 Input voltage (ON) RN1503 RN1504 RN1505 RN1506 Input voltage (OFF) Transition frequency Collector Output capacitance RN1501~1504 RN1505, 1506 RN1501~...




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