RN1601

RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2601~RN2606 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1601 RN1602 RN1603 RN1604 RN1605 RN1606 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 0.015g ― ― 2-3N1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1601~1606 RN1601~1606 RN1601~1604 RN1605, 1606 Symbol VCBO VCEO VEBO IC P C* Tj Tstg Rating 50 50 10 5 100 300 150 −55~150 Unit V V V mA mW °C °C * Total rating 1 2001-06-07 RN1601~RN1606 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN1601~1606 RN1601 RN1602 Emitter cut-off current RN1603 RN1604 RN1605 RN1606 RN1601 RN1602 DC current gain RN1603 RN1604 RN1605 RN1606 Collector-emitter saturation voltage RN1601~1606 RN1601 RN1602 Input voltage (ON) RN1603 RN1604 RN1605 RN1606 Input voltage (OFF) Translation frequency Collector output capacitance RN1601~1604 RN1605~1606 RN16...