RN1707JE

RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1707JE,RN1708JE,RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. · · Wide range of resistor values are available to use in various circuit designs. Complementary to RN2707JE~2709JE Unit: mm Equivalent Circuit and Bias Resistor Values C R1 (kW) 10 22 47 R2 (kW) 47 47 22 Type No. RN1707JE RN1708JE B R1 R2 JEDEC JEITA TOSHIBA Weight: g (typ.) ― ― ― RN1709JE E Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN1707JE~ 1709JE RN1707JE Emitter-base voltage RN1708JE RN1709JE Collector current Collector power dissipation RN1707JE~ 1709JE Junction temperature Storage temperature range IC PC (Note) Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 -55~150 mA mW °C °C V Unit V V Equivalent Circuit (top view) 5 Q1 4 Q2 1 2 3 Note: Total rating 1 2002-01-29 RN1707JE~RN1709JE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current RN1707JE~1709JE RN1707JE Emitter cut-off current RN1708JE RN1709JE RN1707JE DC current gain RN1708JE RN1709JE Collector-emitter saturati...