RN1707~RN1709
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1707,RN1708,RN1709
Switching, Inverter Circ...
RN1707~RN1709
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1707,RN1708,RN1709
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including two devices in USV (ultra super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2707~RN2709 Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No. RN1707 RN1708 RN1709 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22
JEDEC EIAJ TOSHIBA Weight: 0.014g
― ― 2-2L1A
Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector-base voltage Collector-emitter voltage RN1707~1709 RN1707 Emitter-base voltage RN1708 RN1709 Collector current Collector power dissipation Junction temperature Storage temperature range RN1707~1709 Ic Pc* Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 200 150 −55~150 mA mW °C °C V Unit V V
*: Total rating
1
2001-06-07
RN1707~RN1709
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector cut-off current RN1707~1709 RN1707 Emitter cut-off current RN1708 RN1709 RN1707 DC current gain RN1708 RN1709 Collector-emitter saturation voltage RN1707~1709 RN1707 Input voltage (ON) RN1708 RN1709 RN1707 Input voltage (OFF) RN1708 RN1709 Translation frequency Collector output capacitance RN1707~1709 RN1707~1709 RN1707 Input resistor RN1708 RN1709 RN1707 Resistor ratio RN1708 RN1709 R1/R2 R1 fT Cob VI (OFF) VI (ON) VC...