RN1909

RN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2907~RN2909 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1907 RN1908 RN1909 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 6.8mg ― ― 2-2J1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage RN1907~1909 RN1907 Emitter-base voltage RN1908 RN1909 Collector current Collector power dissipation Junction temperature Storage temperature range RN1907~1909 IC P C* Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 200 150 −55~150 mA mW °C °C V Unit V V *: Total rating 1 2001-06-07 RN1907~RN1909 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN1907~1909 RN1907 Emitter cut-off current RN1908 RN1909 RN1907 DC current gain RN1908 RN1909 Collector-emitter saturation voltage RN1907~1909 RN1907 Input voltage (ON) RN1908 RN1909 RN1907 Input voltage (OFF) RN1908 RN1909 Translation frequency Collector output capacitance RN1907~1909 RN1907~1909 RN1907 Input resistor RN1908 RN1909 RN1907 Resistor ratio RN1908 RN1909 R1/R2 R1 fT Cob VI (OFF) VI (ON) VC...