RN2003

RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l l l l With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001~RN1006 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 0.21g TO-92 SC-43 2-5F1B Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2001~2006 RN2001~2006 RN2001~2004 RN2005, 2006 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 400 150 −55~150 Unit V V V mA mW °C °C 1 2001-06-07 RN2001~RN2006 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2001~2006 RN2001 RN2002 Emitter cut-off current RN2003 RN2004 RN2005 RN2006 RN2001 RN2002 DC current gain RN2003 RN2004 RN2005 RN2006 Collector-emitter saturation voltage RN2001~2006 RN2001 RN2002 Input voltage (ON) RN2003 RN2004 RN2005 RN2006 Input voltage (OFF) Transition frequency Collector Output capacitance RN2001~2004 RN2005, 2006 RN2001~2006 RN2001~2006 RN2001 RN2002 Input resistor RN2003 RN2004 RN2005 RN2006 RN2001~2004 Resistor ratio RN2005 RN2006 R1/R2 ― R1 ...