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RN2107

Toshiba Semiconductor

Silicon PNP Transistor

RN2107 to RN2109 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2107/...


Toshiba Semiconductor

RN2107

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Description
RN2107 to RN2109 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2107/08/09 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1107 to 1109 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2107 RN2108 RN2109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990-12 2021-08-30 Rev.1.0 5. Packaging and Pin Assignment RN2107 to RN2109 1: Base 2: Emitter 3: Collector SSM 6. Orderable part number Orderable part number AEC-Q101 Note Note RN2107 RN2107,LF � General Use RN2107,LXGF YES (Note 1) Unintended Use RN2108 RN2107,LXHF RN2108,LF YES � Automotive Use General Use RN2108,LXGF YES (Note 1) Unintended Use RN2109 RN2108,LXHF RN2109,LF YES � Automotive Use General Use RN2109,LXGF YES (Note 1) Unintended Use RN2109,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) (Note 1) (Note 1) 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristi...




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