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RN2206

Toshiba Semiconductor

Silicon PNP Transistor

RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Swi...


Toshiba Semiconductor

RN2206

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Description
RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1201~RN1206 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2201 RN2202 RN2203 RN2204 RN2205 RN2206 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2201~2206 RN2201~2206 RN2201~2204 RN2205, 2206 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 300 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.13g Unit V V V mA mW °C °C ― ― 2-4E1A 1 2001-06-07 RN2201~RN2206 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2201~2206 RN2201 RN2202 Emitter cut-off current RN2203 RN2204 RN2205 RN2206 RN2201 RN2202 DC current gain RN2203 RN2204 RN2205 RN2206 Collector-emitter saturation voltage RN2201~2206 RN2201 RN2202 Input voltage (ON) RN2203 RN2204 RN2205 RN2206 Input voltage (OFF) Translation frequency Collector output capacitance RN2201~2204 RN2205, 2206 RN2201~2206 RN2201~2206 RN2201 RN2202 Input resistor RN2203 RN2204 RN2205 RN2206 RN2201~2204 Resistor ratio RN2205 RN2206 R1/R2 R1 VI (OFF) fT...




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