RN2221~RN2227
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2...
RN2221~RN2227
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l High current type (IC(MAX) = −800mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN1221~RN1227 Unit: mm
Equivalent Circuit
Bias Resistor Values
Type No. RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10
JEDEC EIAJ TOSHIBA Weight: 0.13g
― ― 2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN2221~2227 RN2221~2224 Emitter-base voltage RN2225, 2226 RN2227 Collector current Collector power dissipation Junction temperature Storage temperature range RN2221~2227 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −10 −5 −6 −800 300 150 −55~150 mA mW °C °C V Unit V V
1
2001-06-07
RN2221~RN2227
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current RN2221~2227 RN2221 RN2222 RN2223 Emitter cut-off current RN2224 RN2225 RN2226 RN2227 RN2221 RN2222 RN2223 DC current gain RN2224 RN2225 RN2226 RN2227 Collector-emitter saturation voltage RN2221 RN2222~2227 RN2221 RN2222 RN2223 Input voltage (ON) RN2224 RN2225 RN2226 RN2227 RN2221~2224 Input voltage (OFF) Translation frequency Collector output capacitance RN2225, 2226 RN2227 RN2221~2227 RN2221~2227 R...