RN2505

RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1501~RN1506 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 0.014g ― ― 2-3L1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2501~2506 RN2501~2506 RN2501~2504 RN2505, 2506 Symbol VCBO VCEO VEBO IC P C* Tj Tstg Rating −50 −50 −10 −5 −100 300 150 −55~150 Unit V V V mA mW °C °C * Total rating 1 2001-06-07 RN2501~RN2506 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2501~2506 RN2501 RN2502 Emitter cut-off current RN2503 RN2504 RN2505 RN2506 RN2501 RN2502 DC current gain RN2503 RN2504 RN2505 RN2506 Collector-emitter saturation voltage RN2501~2506 RN2501 RN2502 Input voltage (ON) RN2503 RN2504 RN2505 RN2506 Input voltage (OFF) Translation frequency Collector output capacitance RN2501~2504 RN2505, 2506...