RN2702JE

RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. · Complementary to RN1701JE~RN1706JE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No. RN2701JE RN2702JE R2 RN2703JE RN2704JE E RN2705JE RN2706JE R1 (kW) 4.7 10 22 47 2.2 4.7 R2 (kW) 4.7 10 22 47 47 47 B R1 JEDEC JEITA TOSHIBA Weight: g (typ.) ― ― ― Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2701JE~RN2706JE RN2701JE~RN2706JE RN2701JE~RN2704JE RN2705JE, RN2706JE Symbol VCBO VCEO VEBO IC PC (Note) Tj Tstg Rating -50 -50 -10 -5 -100 100 150 -55~150 Unit V V V mA mW °C °C 1 2 3 Equivalent Circuit (top view) 5 Q1 4 Q2 Note: Total rating 1 2002-01-24 RN2701JE~RN2706JE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current RN2701JE~2706JE RN2701JE RN2702JE Emitter cut-off current RN2703JE RN2704JE RN2705JE RN2706JE RN2701JE RN2702JE DC current gain R...