RN2709

RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2707,RN2708,RN2709 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in USV (ultra super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1707~RN1709 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2707 RN2708 RN2709 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 6.2mg ― ― 2-2L1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage RN2707~2709 RN2707 Emitter-base voltage RN2708 RN2709 Collector current Collector power dissipation Junction temperature Storage temperature range RN2707~2709 IC P C* Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −6 −7 −15 −100 200 150 −55~150 mA mW °C °C V Unit V V * : Total rating 1 2001-06-07 RN2707~RN2709 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2707~2709 RN2707 Emitter cut-off current RN2708 RN2709 RN2707 DC current gain RN2708 RN2709 Collector-emitter saturation voltage RN2707~2709 RN2707 Input voltage (ON) RN2708 RN2709 RN2707 Input voltage (OFF) RN2708 RN2709 Translation frequency Collector output capacitance RN2707~2709 RN2707~2709 RN2707 Input resistor RN2708 RN2709 RN2707 Resistor ratio RN2708 RN2709 R1/R2 R1 fT Cob VI (OFF) VI ...