RN47A4

RN47A4 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A4 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Unit: mm Equivalent Circuit and Bias Resistor Values Q1 C Q2 C B R1 R2 B R1 R2 JEDEC E E ― ― ― g (typ.) JEITA TOSHIBA Weight: Q1 R1: 47 kΩ, R2: 47 kΩ Q2 R1: 10 kΩ, R2: 47 kΩ Q1: RN1104F Q2: RN2107F Marking 5 4 Equivalent Circuit (top view) 5 4 24 Q1 Q2 1 2 3 1 2 3 1 2002-01-30 RN47A4 Maximum Ratings (Ta = 25°C) (Q1) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA Maximum Ratings (Ta = 25°C) (Q2) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -50 -50 -6 -100 Unit V V V mA Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note) Tj Tstg Rating 200 150 -55~150 Unit mW °C °C Note: Total rating 2 2002-01-30 RN47A4 Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Collector cut-off current Emitter cut-off current DC...