DatasheetsPDF.com

RN4987

Toshiba Semiconductor

Silicon PNP/NPN Transistor

RN4987 Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4987 1. App...


Toshiba Semiconductor

RN4987

File DownloadDownload RN4987 Datasheet


Description
RN4987 Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4987 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Including two devices in US6 (ultra super mini type with 6 leads) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. 3. Equivalent Circuit 4. Packaging and Pin Assignment 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 US6 5. Orderable part number Orderable part number AEC-Q101 Note RN4987,LF RN4987,LXGF RN4987,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1992-10 2021-08-24 Rev.2.0 RN4987 6. Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit 50 V 50 6 100 mA 7. Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit -50 V -50 -6 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)