RN4987FE
Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN4987FE
1....
RN4987FE
Bipolar
Transistors Silicon
NPN/
PNP Epitaxial Type (PCT Process)(Bias Resistor built-in
Transistor)
RN4987FE
1. Applications
Switching Inverter Circuits Interfacing Driver Circuits
2. Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
3. Equivalent Circuit
4. Packaging and Pin Assignment
ES6
©2021
1
Toshiba Electronic Devices & Storage Corporation
1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1
Start of commercial production
2000-05 2021-08-18
Rev.1.0
5. Orderable part number
RN4987FE
Orderable part number
AEC-Q101
Note
RN4987FE,LF
�
General Use
RN4987FE,LXGF
YES
(Note 1) Unintended Use
RN4987FE,LXHF
YES
Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
6. Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol
VCBO VCEO VEBO
IC
Rating
Unit
50
V
50
6
100
mA
7. Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol
VCBO VCEO VEBO
IC
Rating
Unit
-50
V
-50
-6
-100
mA
8. Q1, Q2 Comm...