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RF2643 Dataheets PDF



Part Number RF2643
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description 3V DUAL-BAND UPCONVERTER AND DRIVER AMPLIFIER
Datasheet RF2643 DatasheetRF2643 Datasheet (PDF)

Preliminary RF2643 3V DUAL-BAND UPCONVERTER AND DRIVER AMPLIFIER 6 Typical Applications • TDMA/AMPS Cellular Systems • CDMA/AMPS Cellular Systems • PCS Systems • Portable Battery-Powered Equipment Product Description The RF2643 is a complete upconverter, dual-power amplifier driver and attenuator designed for Cellular and PCS systems. It is designed to upconverter and amplifies RF signals while providing 22dB of linear gain control range. It features digital control for the mixer and drivers.

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Preliminary RF2643 3V DUAL-BAND UPCONVERTER AND DRIVER AMPLIFIER 6 Typical Applications • TDMA/AMPS Cellular Systems • CDMA/AMPS Cellular Systems • PCS Systems • Portable Battery-Powered Equipment Product Description The RF2643 is a complete upconverter, dual-power amplifier driver and attenuator designed for Cellular and PCS systems. It is designed to upconverter and amplifies RF signals while providing 22dB of linear gain control range. It features digital control for the mixer and drivers. The device features balanced IF inputs, single-ended LO input and dual RF output for Cellular and PCS Systems respectively. The IC is manufactured on an advanced Silicon Bi-CMOS process and packaged in a 20-pin, 4mmx4mm, leadless chip carrier with an exposed die flag. 1.00 0.90 0.60 0.24 typ 4.00 sq. 0.65 0.30 4 PLCS 3 0.20 2.10 sq. 6 MIXERS 12° MAX 0.05 Dimensions in mm. 0.75 0.50 0.50 Note orientation of package. 0.23 0.13 4 PLCS NOTES: 1 Shaded lead is Pin 1. 2 Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. 3 Dimension applies to plated terminal: to be measured between 0.02 mm and 0.25 mm from terminal end. 4 Package Warpage: 0.05 mm max. 5 Die Thickness Allowable: 0.305 mm max. Optimum Technology Matching® Applied Package Style: LCC, 20-Pin, 4x4 üSi Bi-CMOS CELL MIXOUT Si BJT GaAs HBT SiGe HBT CELL GND CELL VCC GaAs MESFET Si CMOS CELL IN Features • Single Supply 3.0V Operation • Power Down Control * PD LO BYPASS IF+ IF1 2 3 4 5 * SEL 20 19 Logic 18 17 16 * 15 14 CELL ATT GND CELL OUT VGC PCS OUT PCS ATT GND • Gain Control Range of 22dB • Driver Amplifier Select Pin (RF Output Select) • High Linearity in Mixer and Driver Amp Bias Circuit 13 12 11 6 PCS MIXOUT 7 VCC MIX 8 VCC 9 PCS VCC 10 PCS IN * Ordering Information RF2643 RF2643 PCBA 3V Dual-Band Upconverter and Driver Amplifier Fully Assembled Evaluation Board * Represents "GND". Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 010717 6-37 RF2643 Absolute Maximum Ratings Parameter Supply Voltage Input RF Power Operating Ambient Temperature Storage Temperature Preliminary Rating -0.5 to +3.6 +3 -30 to +80 -30 to +150 Unit VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Upconverter Both Bands IF Frequency Range LO Input Level RF to LO Isolation IF to RF Isolation IF to LO Isolation IF Input Impedance Differential IF Input Return Loss Differential LO Input Impedance Single-Ended LO Input Return Loss Single-Ended RF Output Impedance Single-Ended RF Output Return Lo.


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