LOW NOISE/ MULTI-MODE/ QUAD-BAND/ QUADRATURE MODULATOR AND PA DRIVER
RF2705
0
Typical Applications • EDGE/GSM (GSM850/900) Handsets • EDGE/GSM (DCS/PCS) Handsets • W-CDMA Handsets/Data Card...
Description
RF2705
0
Typical Applications EDGE/GSM (GSM850/900) Handsets EDGE/GSM (DCS/PCS) Handsets W-CDMA Handsets/Data Cards Product Description
4.00
LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER
W-CDMA/GSM/EDGE Multimode Handsets and Data Cards
-A-B-
1.00 0.80
The RF2705 is a low noise, multi-mode, quad-band direct I/Q to RF modulator and PA driver designed for handset applications where multiple modes of operation are required. Frequency doublers, dividers and LO buffers are included to support a variety of LO generation options. Dynamic power control is supported through a single analog input giving 90dB of power control range for the W-CDMA mode and 40dB of power control in the other two modes. Three sets of RF outputs are provided: high band and low band low noise EDGE/GMSK outputs, as well as one wideband W-CDMA output. The device is designed for 2.7V to 3.3V operation, and is assembled in a plastic, 24-pin, 4mmx4mm QFN.
0.10 C
4.00
0.10 C
0.10 C
0.10 C
2.45 0.50 TYP
+0.10 -0.10
Shaded lead is pin 1.
Dimensions in mm.
-C-
SEATING PLANE Scale: None 0.10 C 0.08 C
2.45
+0.10 -0.10
0.05 0.00
0.30 TYP 0.18
0.10 M C A B
0.50 TYP 0.30
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS InGaP/HBT
MODE B
Package Style: QFN, 24-Pin, 4x4
GaAs HBT SiGe HBT GaN HEMT
GaAs MESFET
9SiGe Bi-CMOS
MODE A GND 20 19 18 RF OUT WB P
Si CMOS
Features W-CDMA High/Mid/Low Power Modes Quad-Band Direct Quadrature Modulator Variable Gain PA D...
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