RFD12N06RLESM

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet July 1999 File Number 2407.4 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09861. Features 12A, 60V rDS(ON) = 0.135Ω Electrostatic Discharge Protected UIS Rating Curve (Single Pulse) Design Optimized for 5V Gate Drive Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E) /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- Symbol D Ordering Information PART NUMBER RFD12N06RLE RFD12N06RLESM RFP12N06RLE PACKAGE TO-251AA TO-252AA TO-220AB BRAN...