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RFD14N06L Dataheets PDF



Part Number RFD14N06L
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 14A/ 60V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs
Datasheet RFD14N06L DatasheetRFD14N06L Datasheet (PDF)

RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 File Number 4088.3 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This.

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RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 File Number 4088.3 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870. Features • 14A, 60V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD14N06L RFD14N06LSM RFP14N06L PACKAGE TO-251AA TO-252AA TO-220AB BRAND 14N06L 14N06L FP14N06L Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD14N06L, RFD14N06LSM, RFP14N06LS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD14N06L, RFD14N06LSM, RFP14N06LS 60 60 ±10 14 Refer to Peak Current Curve Refer to UIS Curve 48 0.32 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V, Figure 13 VGS = VDS, ID = 250µA, Figure 12 VDS = 48V, VGS = 0V VGS = ±10V ID = 14A, VGS = 5V VDD = 30V, ID = 7A, RL = 4.28Ω, VGS = 5V, RGS = 0.6Ω Figures 10, 18, 19 TC = 25oC TC = 150oC MIN 60 1 VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 48V, ID = 14A, RL = 3.43Ω Figures 20, 21 TO-251 and TO-252 TO-220 TYP 13 24 42 16 670 185 50 MAX 2 1 50 100 0.100 60 100 40 25 1.5 3.125 100 80 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RθJC RθJA VDS = 25V, VGS = 0V, f = 1MHz Figure 14 Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 14A ISD = 14A, dISD/dt = 100A/µs MIN TYP MAX 1.5 125 UNITS V ns 6-2 RFD14N06L, RFD14N06LSM, RFP14N06L Typ.


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