Document
RFD15N06LE, RFD15N06LESM
Data Sheet April 1999 File Number
4079.1
15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49165.
Features
• 15A, 60V • rDS(ON) = 0.065Ω • 2kV ESD Protected • Temperature Compensating PSPICE™ Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFD15N06LE RFD15N06LESM PACKAGE TO-251AA TO-252AA BRAND F15N6L F15N6L
Symbol
D
NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 9A to the part number, i.e. RFD15N06LESM9A.
G
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
6-149
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE™ is a trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFD15N06LE, RFD15N06LESM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFD15N06LE, RFD15N06LESM 60 60 ±10 15 Refer to Peak Current Curve Refer to UIS Curve 72 0.48 -55 to 175 2 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . ESD Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
W W/oC oC kV
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RθJC RθJA TO-251 and TO-252 VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 48V, ID = 15A, RL = 3.20Ω Figures 20, 21 TEST CONDITIONS ID = 250µA, VGS = 0V, Figure 13 VGS = VDS, ID = 250µA, Figure 12 VDS = 48V, VGS = 0V VGS = ±10V ID = 15A, VGS = 5V VDD = 30V, ID = 15A, RL = 2.0Ω, VGS = 5V, RGS = 2.5Ω Figures 10, 18, 19 TC = 25oC TC = 150oC MIN 60 1 TYP 11 40 30 18 39 21 0.95 855 240 75 MAX 2 1 50 10 0.065 77 75 49 26 1.20 2.08 100 UNITS V V µA µA µA Ω ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
VDS = 25V, VGS = 0V, f = 1MHz Figure 14
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). SYMBOL VSD trr TEST CONDITIONS ISD = 15A ISD = 15A, dISD/dt = 100A/µs MIN TYP MAX 1.5 80 UNITS V ns
6-150
RFD15N06LE, RFD15N06LESM Typical Performance Curves
1.2.