DatasheetsPDF.com

RFD15P06SM Dataheets PDF



Part Number RFD15P06SM
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs
Datasheet RFD15P06SM DatasheetRFD15P06SM Datasheet (PDF)

RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors ca.

  RFD15P06SM   RFD15P06SM


Document
RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09833. Features • 15A, 60V • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD15P06 RFD15P06SM RFP15P06 PACKAGE TO-251AA TO-252AA TO-220AB BRAND F15P06 F15P06 RFP15P06 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P06SM9A. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 4-103 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD15P06, RFD15P06SM, RFP15P06 Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFD15P06, RFD15P06SM, RFP15P06 -60 -60 15 Refer to Peak Current Curve ±20 Refer to UIS Curve 80 0.533 -55 to 175 300 260 UNITS V V A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Figure 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RθJC RθJA TO-220AB, TO-251AA, TO-252AA TO-251AA, TO-252AA TO-220AB VGS = 0V to -20V VGS = 0V to -10V VGS = 0V to -2V VDD = -48V, ID = 15A, RL = 3.20Ω IG(REF) = 0.65mA TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 150oC VGS = ±20V ID ≈ 15A, VGS = -10V, (Figure 9) VDD = -30V, ID = 7.5A RL = 4.0Ω, VGS = -10V RG = 12.5Ω (Figure 13) MIN -60 -2.0 TYP 16 30 50 20 1150 300 56 MAX -4.0 -1 -25 ±100 0.150 60 100 150 75 3.5 1.875 100 62 UNITS V V µA µA nA W ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient VDS = -25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Notte 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration ≤ 300ms Max, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL VSD trr ISD = -15A ISD = -15A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX -1.5 125 UNITS V ns 4-104 RFD15P06, RFD15P06SM, RFP15P06 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) -12 Unless Otherwise Specifie.


RFD15P06 RFD15P06SM RFD16N02


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)