RFD16N02LSM

RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Features 16A, 20V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Ordering Information PART NUMBER RFD16N02L RFD16N02LSM PACKAGE TO-251AA TO-252AA BRAND 16N02L 16N02L Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, e.g. RFD16N02LSM9A. G Formerly developmental type TA49243. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © I...