RFD16N05SM

Data Sheet RFD16N05SM September 2013 N-Channel Power MOSFET 50V, 16A, 47 mΩ The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Ordering Information PART NUMBER PACKAGE RFD16N05SM9A TO-252AA BRAND D16N05 Features 16A, 50V rDS(ON) = 0.047Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE ©2003 Fairchild Semiconductor Corporation RFD16N05SM Rev. C0 RFD16N05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD16N05SM9A UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....