Semiconductor
RFD16N06, RFD16N06SM
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
Description
These N-Channel power MOSFET...
Semiconductor
RFD16N06, RFD16N06SM
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
Description
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA09771.
September 1998
Features
16A, 60V rDS(ON) = 0.047Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title (RFD16 N06, RFD16 N06SM) /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre-
Symbol Ordering Information
PART NUMBER RFD16N06 RFD16N06SM PACKAGE TO-251AA TO-252AA BRAND F16N06 F16N06
SOURCE GATE DRAIN
NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A.
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE GATE SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyr...