July 1999 File Number 4350.1
20A, 30V, 0.025 Ohm, N-Channel Power
The RFD20N03 and RFD20N03SM N-Channel power
MOSFETs are manufactured using the MegaFET process.
This process which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA49235.
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, e.g., RFD20N03SM9A.
• 20A, 30V
• rDS(ON) = 0.025Ω
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
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