RFD3055

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158. Features 11A, 60V rDS(ON) = 0.107Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD3055LE RFD3055LESM RFP3055LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F3055L G F3055L FP3055LE S NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE ©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Rev. B RFD3055LE, RFD3055LESM, RFP3055LE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD3055LE, RFD3055LESM, RFP3055LE 60 60 ...