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RFD3055LE Dataheets PDF



Part Number RFD3055LE
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs
Datasheet RFD3055LE DatasheetRFD3055LE Datasheet (PDF)

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 File Number 4044.3 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, mot.

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RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 File Number 4044.3 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158. Features • 11A, 60V • rDS(ON) = 0.107Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD3055LE RFD3055LESM RFP3055LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F3055L G F3055L FP3055LE S NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 6-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD3055LE, RFD3055LESM, RFP3055LE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD3055LE, RFD3055LESM, RFP3055LE 60 60 ±16 11 Refer to Peak Current Curve Refer to UIS Curve 38 0.25 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RθJC RθJA TO-220AB TO-251AA, TO-252AA VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 25V, VGS = 0V, f = 1MHz (Figure 14) VDD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 20, 21) TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC VGS = ±16V ID = 8A, VGS = 5V (Figure 11) VDD ≈ 30V, ID = 8A, VGS = 4.5V, RGS = 32Ω (Figures 10, 18, 19) MIN 60 1 TYP 8 105 22 39 9.4 5.2 0.36 350 105 23 MAX 3 1 250 ±100 0.107 170 92 11.3 6.2 0.43 3.94 62 100 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). SYMBOL VSD trr ISD = 8A ISD = 8A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX 1.25 66 UNITS V ns 6-2 RFD3055LE, RFD3055LE.


RFD3055LE RFD3055LE RFD3055LESM


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