RFD4N06LSM

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520. Features 4A, 60V rDS(ON) = 0.600Ω Design Optimized for 5 Volt Gate Drive Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits SOA is Power Dissipation Limited 175oC Rated Junction Temperature Logic Level Gate High Input Impedance Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM PACKAGE TO-251AA TO-252AA BRAND RFD4N06L RFD4N06LSM - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 6-189 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD4N06L, RFD4N06LSM Absolute Maximu...