RFG60P03

RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 File Number 3951.3 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49045. Features 60A, 30V rDS(ON) = 0.027Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG60P03 RFP60P03 RF1S60P03SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG60P03 RFP60P03 F1S60P03 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A. S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-140 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-...