RFG60P05E

www.DataSheet4U.com RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits. Formerly developmental type TA09835. Features 60A, 50V rDS(ON) = 0.030Ω Temperature Compensating PSPICE® Model 2kV ESD Rated Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG60P05E NOTE: PACKAGE TO-247 BRAND RFG60P05E Symbol D When ordering, use the entire part number. G S DataShee DataSheet4U.com Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DataSheet4U.com ©2002 Fairchild Semiconductor Corporation RFG60P05E Rev. B DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com RFG60P05E Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG60P05E -50 -50 ±20 60 Refer to Peak Current Curve 215 1.43 Refer to UIS Curve 2 -55 to 175 300 260 UNITS V V V A W W/oC W/oC kV oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . ....