RFH10N50

RFH10N45, RFH10N50 Semiconductor Data Sheet October 1998 File Number 1629.2 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Features 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate rDS(ON) = 0.600Ω (RFH10 power field effect transistors designed for applications such Related Literature as switching regulators, switching converters, motor drivers, N45, - TB334 “Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching RFH10N Components to PC Boards” transistors requiring high speed and low gate drive power. 50) These types can be operated directly from integrated circuits. /Subject Symbol Formerly developmental type TA17435. (10A, D 450V Ordering Information and PART NUMBER PACKAGE BRAND G 500V, RFH10N45 TO-218AC RFH10N45 0.600 S RFH10N50 TO-218AC RFH10N50 Ohm, N-Chan- NOTE: When ordering, include the entire part number. nel Power Packaging MOSJEDEC TO-218AC FETs) SOURCE /Author DRAIN () GATE /Keywords (Harris Semiconductor, DRAIN (FLANGE) N-Channel Power MOSFETs, TO218AC) /Creator () /DOCIN FO pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFH10N45, RFH10N50S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH10N45 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) ...