RFK25N18

RFK25N18, RFK25N20 Data Sheet October 1998 File Number 1500.3 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Features 25A, 180V and 200V rDS(ON) = 0.150Ω Symbol D G Ordering Information PART NUMBER RFK25N18 RFK25N20 PACKAGE TO-204AE TO-204AE BRAND RFK25N18 RFK25N20 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFK25N18, RFK25N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFK25N18 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage...