RFK70N06

RFK70N06 Data Sheet September 1998 File Number 4331.1 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007. Features 70A, 60V rDS(ON) = 0.014Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFK70N06 PACKAGE TO-204AE BRAND RFK70N06 S G NOTE: When ordering, use the entire part number. Packaging TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFK70N06 Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFK70N06 60 60 70 Refer to Peak Current Curve ±20 Refer to UIS Curve 150 1.0 -55 to 175 260 UNITS V V A V W W/oC oC oC Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Vo...