Power MOSFETs. RFL1N18 Datasheet

RFL1N18 MOSFETs. Datasheet pdf. Equivalent


Intersil Corporation RFL1N18
Semiconductor
January 1998
Features
• 1A, 180V and 200V
• rDS(ON) = 3.65
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N18
TO-205AF
RFL1N18
RFL1N20
TO-205AF
RFL1N20
NOTE: When ordering, use the entire part number.
RFL1N18,
RFL1N20
1A, 180V and 200V, 3.65 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1442.2


RFL1N18 Datasheet
Recommendation RFL1N18 Datasheet
Part RFL1N18
Description 1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs
Feature RFL1N18; Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description The.
Manufacture Intersil Corporation
Datasheet
Download RFL1N18 Datasheet




Intersil Corporation RFL1N18
RFL1N18, RFL1N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFL1N18
180
180
1
5
±20
8.33
0.0667
-55 to 150
300
260
RFL1N20
200
200
1
5
±20
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL1N18
BVDSS ID = 250µA, VGS = 0V
180 - - V
RFL1N20
200 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = 0.8 x Rated
BVDSS
TC = 25oC
TC = 125oC
VGS = ±20V, VDS = 0V
ID = 1A, VGS = 10V
ID = 2A, VGS = 10V
ID = 1A, VGS = 10V, (Figures 6, 7)
ID = 1A, VDS = 10V, (Figure 10)
ID 1A, VDD = 100V RGS = 50,
VGS = 10V, (Figures 11, 12, 13)
VGS = 0V, VDS = 25V, f = 1MHz,
(Figure 9)
2- 4 V
--
1 µA
- - 25 µA
-
-
±100
nA
- - 3.65 V
- - 8.3 V
- - 3.65
400 - - S
- 15 25
ns
- 20 30
ns
- 25 40
ns
- 30 50
ns
- - 200 pF
- - 60 pF
- - 25 pF
- - 15 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr ISD = 2A, dISD/dt = 50A/µs
NOTE:
2. Pulse test: pulse width 300µs maximum, duty cycle 2%.
MIN TYP MAX UNITS
- - 1.4 V
- 200 -
ns
5-2



Intersil Corporation RFL1N18
RFL1N18, RFL1N20
Typical Performance Curves Unless Otherwise Specified
1.2 1.4
1.0 1.2
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2 0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10.00
1.00
TC = 25oC
TJ = MAX RATED
0.10
OPERATION IN THIS
AREA LIMITED BY rDS(ON)
0.01
1
RFL1N18
RFL1N20
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
3.0
250µs PULSE TEST
2.5
DUTY CYCLE 20%
TC = 25oC
2.0
VGS = 20V
VGS = 10V
VGS = 8V
1.5
1.0
0.5
0
0
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
123 4 5 6
VDS, DRAIN TO SOURCE VOLTAGE (V)
7
FIGURE 4. SATURATION CHARACTERISTICS
3.0
VDS = 15V
250µs PULSE TEST
2.5 DUTY CYCLE 2%
TC = 25oC
2.0 TC = -40oC
1.5 TC = 125oC
1.0
0.5
0
0
TC = 125oC
TC = -40oC
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERSTICS
6
VGS = 10V
250µs PULSE TEST
5 DUTY CYCLE 2%
4
3
2
TC = 125oC
TC = 25oC
TC = -40oC
1
0
12 0 0.5 1.0 1.5 2.0 2.5 3.0
ID, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3







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