RFL1P08

Semiconductor RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9400. July 1998 Features 1A, -80V and -100V rDS(ON) = 3.65Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10 PACKAGE TO-205AF TO-205AF BRAND RFL1P08 RFL1P10 Symbol D G NOTE: When ordering, include the entire part number. S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1535.2 6-1 RFL1P08, RFL1P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1P08 -80 -80 1 5 ±20 8.33 0.0667 -55 to 150 300 RFL1P10 -100 -100 1 5 ±20 8.33 0.0667 -55 to 150 300 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . ...