RFL2N06

Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998 Features 2A, 50V and 60V rDS(ON) = 0.95Ω SOA is Power-Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFL2N05 RFL2N05 PACKAGE TO-205AF TO-205AF BRAND RFL2N05 RFL2N05 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1497.2 5-1 RFL2N05, RFL2N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL2N05 50 50 ±20 2 10 8.33 0.0667 -55 to 150 300 260 RLF2N06 60 60 ±20 2 10 8.33 0.0667 -55 to 150 300 260 UNITS V V V A A W W/ oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . ....