Power MOSFETs. RFL2N06 Datasheet

RFL2N06 MOSFETs. Datasheet pdf. Equivalent

RFL2N06 Datasheet
Recommendation RFL2N06 Datasheet
Part RFL2N06
Description 2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs
Feature RFL2N06; Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These.
Manufacture Intersil Corporation
Datasheet
Download RFL2N06 Datasheet




Intersil Corporation RFL2N06
Semiconductor
January 1998
Features
• 2A, 50V and 60V
• rDS(ON) = 0.95
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N05
TO-205AF
RFL2N05
RFL2N05
TO-205AF
RFL2N05
NOTE: When ordering, include the entire part number.
RFL2N05,
RFL2N06
2A, 50V and 60V, 0.95 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1497.2



Intersil Corporation RFL2N06
RFL2N05, RFL2N06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFL2N05
50
50
±20
2
10
8.33
0.0667
-55 to 150
300
260
RLF2N06
60
60
±20
2
10
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFL2N05
BVDSS ID = 250µA, VGS = 0
RFL2N06
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
IDSS
VTCDS==250o.8Cx Rated BVDSS,
TC = 125oC
IGSS VGS = ±20V, VDS = 0
VDS(ON) ID = 1A, VGS = 10V
ID = 2A, VGS = 10V
ID = 4A, VGS = 15V
rDS(ON) ID = 1A, VGS = 10V, (Figures 6, 7)
gfs ID = 1A, VDS = 10V, (Figure 10)
td(ON)
tr
ID 1A, VDD = 30V, RGS = 50,
VGS = 10V, (Figures 11, 12, 13)
td(OFF)
tf
CISS
COSS
VGS = 0V, VDS = 25V,
f = 1MHz, (Figure 9)
CRSS
RθJC
Source to Drain Diode Specifications
MIN TYP MAX UNITS
50 -
60 -
2-
--
-V
-V
4V
1 µA
- - 25 µA
- - ±100 nA
- - 0.95 V
- - 2.0 V
- - 4.8 V
- - 0.95
400 - - S
- 6 15 ns
- 14 30 ns
- 16 30 ns
- 30 50 ns
- - 200 pF
- - 85 pF
- - 30 pF
- - 15 oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
Diode Reverse Recovery Time
trr
NOTE:
2. Pulse test: pulse width 300µs, duty cycle 2%.
ISD = 1A
ISD = 2A, dISD/dt = 50A/µs
MIN TYP MAX UNITS
- - 1.4 V
- 100 -
ns
5-2



Intersil Corporation RFL2N06
RFL2N05, RFL2N06
Typical Performance Curves Unless Otherwise Specified
1.2 2.5
1.0
2.0
0.8
1.5
0.6
1.0
0.4
0.5
0.2
0.0
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10.00
OPERATION IN THIS AREA
LIMITED BY rDS(ON)
1.00
TJ = MAX RATED
0.10
0.01
1
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
10
250µs PULSE TEST
DUTY CYCLE 2%
8 TC = 25oC
VGS = 20V
6
VGS = 10V
VGS = 9V
4
VGS = 8V
VGS = 7V
2
VGS = 6V
VGS = 5V
0
0 12
34
567
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
4
VDS = 10V
250µs PULSE TEST
3
2
-40oC
25oC
125oC
1
0
024
68
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
10
VGS = 10V
1.4 250µs PULSE TEST
1.2
125oC
1.0
25oC
0.8
0.6 -40oC
0.4
0.2
0
0 1 2 34 5
ID, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
5-3







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