RFL4N15

Semiconductor RFL4N12, RFL4N15 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9192. September 1998 Features 4A, 120V and 150V rDS(ON) = 0.400Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFL4N12 RFL4N15 PACKAGE TO-205AF TO-205AF BRAND RFL4N12 RFL4N15 Symbol D G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1462.2 5-1 RFL4N12, RFL4N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL4N12 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...