RFM12N08

RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N10, transistors requiring high speed and low gate drive power. RFP12 These types can be operated directly from integrated N08, circuits. RFP12 Formerly developmental type TA09594. N10) /SubOrdering Information ject PART NUMBER PACKAGE BRAND (12A, 80V and RFM12N08 TO-204AA RFM12N08 100V, RFM12N10 TO-204AA RFM12N10 0.2 RFP12N08 TO-220AB RFP12N08 Ohm, N-Chan- RFP12N10 TO-220AB RFP12N10 nel NOTE: When ordering, use the entire part number. Power MOSPackaging FETs) /Author JEDEC TO-204AA () DRAIN /Key(FLANGE) words (Harris Semiconductor, NSOURCE (PIN 2) ChanGATE (PIN 1) nel Power MOSFETs, TO204AA, TO220AB) /Cre- 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs Features 12A, 80V and 100V rDS(ON) = 0.200Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM...