Semiconductor
RFM18N08, RFM18N10, RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
Description
...
Semiconductor
RFM18N08, RFM18N10, RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.
BRAND RFM18N08 RFM18N10 RFP18N08 RFP18N10
G
September 1998
[ /Title (RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10) /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark
Features
18A, 80V and 100V rDS(ON) = 0.100Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFM18N08 RFM18N10 RFP18N08 RFP18N10 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB
Symbol
D
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-204AA
DRAIN (FLANGE) DRAIN (TAB)
JEDEC TO-220AB
SOURCE DRAIN GATE
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1998
File Number
1446.1
5-1
RFM18N08, RFM18N10, RFP18N08, RFP18N10
Absolute Maximum Ratings
TC = 25oC, Un...